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利用溶液法在硅和二氧化硅基底上制备铟镓锌氧有源层，并采用电子束蒸镀铝电极，完成了底栅极顶接触结构的铟镓锌氧薄膜晶体管(IGZO-TFT)器件的制备。研究在不同退火氛围下(空气、真空、氮气)，IGZOTFT器件场效应性能、薄膜表面粗糙度和光学性能的变化。通过实验对比得出，溶液法制备的IGZO-TFT器件，改变退火氛围可以显著提升器件的场效应、光学性能和改善器件薄膜的粗糙度。在真空退火氛围下得到了较好的场效应性能、薄膜表面粗糙度和光学性能，其开关比达到了9.6×105，迁移率为0.71 cm2·V-1·S-1，亚阈值摆幅为0.12 V·dec-1，阈值电压为5.56 V，最大透过率为95%，粗糙度为0.32 nm。
Abstract：An indium-gallium-zinc-oxygen thin film transistor(IGZO-TFT) with top gate contact structure was prepared by means of an indium-gallium-zinc-oxygen active layer on silicon and silica substrates by solution method, and aluminum electrode was deposited by electron beam evaporation. The field effect properties, surface roughness and optical properties of IGZO-TFT devices under different annealing atmospheres(air, vacuum and nitrogen) were investigated. The experimental results show that the field effect, optical properties and the roughness of the film of IGZO-TFT devices prepared by solution method can be significantly improved by changing the annealing atmosphere. Better field effect properties, surface roughness and optical properties were obtained under vacuum annealing. The switching ratio reached 9.6×105, the mobility was 0.71 cm2·V-1·S-1, the subthreshold swing was 0.12 V·dec-1, the threshold voltage was 5.56 V, and the maximum transmittibility was 95%. The roughness is 0.32 nm.
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基本信息:
DOI：10.20203/j.cnki.2095-8919.2025.03.013
中图分类号:TN321.5
引用信息:
[1]纪雷阳,杨小天,刘国祥,等.不同退火氛围下溶液法制备IGZO-TFT器件电学性能研究[J].吉林建筑大学学报,2025,42(03):83-88.DOI:10.20203/j.cnki.2095-8919.2025.03.013.
基金信息:
吉林省教育厅科学技术研究项目(JJKH20240364KJ)
2025-06-15
2025-06-15